Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates

  • G. B. Galiev, A. N. Klochkov, I. S. Vasil’evskii, E. A. Klimov, S. S. Pushkarev, A. N. Vinichenko, R. A. Khabibullin, P. P. Maltsev
  • Semiconductors, June 2017, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782617060100

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