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Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures
D. V. Lavrukhin, A. E. Yachmenev, A. S. Bugaev, G. B. Galiev, E. A. Klimov, R. A. Khabibullin, D. S. Ponomarev, P. P. Maltsev- Semiconductors, July 2015, Pleiades Publishing Ltd
- DOI: 10.1134/s1063782615070179
