Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density

  • R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, D. S. Ponomarev, R. A. Lunin, V. A. Kulbachinskii
  • Semiconductors, October 2011, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782611100125

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

The following have contributed to this page: Dr Rustam Khabibullin

join the fight against climate change

Our simple summaries of climate research help you take action

Read now