Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, D. S. Ponomarev, V. P. Gladkov, V. A. Kulbachinskii, A. N. Klochkov, N. A. Uzeeva
  • Semiconductors, May 2011, Pleiades Publishing Ltd
  • DOI: 10.1134/s1063782611050162

PHEMT with different channel depth

What is it about?

Scaling is the main trend of modern electronics. The issue of scaling suggests reducing of the size of semiconductor materials and topological elements of the devices. The article highlights the research on the influence of scaling on the fundamental properties of semiconductor materials. The authors explore the influence of the decrease of the distance between the channel and the surface of the heterostructure on the optical and electrical properties of AlGaAs/InGaAs/GaAs PHEMT heterostructure.

Why is it important?

The compensation increase of the doping concentration under the decrease of the barrier layer thickness for constant electron concentration in the channel is analyzed. The given calculation is proved experimentally. The influence of the decrease of the distance between the channel and the surface of the heterostructure on the energy spectrum of the heterostructure is studied by photoluminescence spectroscopy, Hall effect and Shubnikov- de Haas oscillations methods.

The following have contributed to this page: Dr Rustam Khabibullin