What is it about?
A series of fabrication steps, including wet etching of mercury cadmium telluride (MCT, HgCdTe), passivation with HfO2, deposition of amorphous Si (a-Si), electron beam lithography (EBL), and dry etching processes, have been discussed to form a dielectric grating array onto a thin HgCdTe absorbing layer. The process has been demonstrated as an alternative or complementary approach for Auger-suppressed high operating temperature (HOT) infrared (IR) photodetectors (PDs) (e.g., P-ν-N), considering the challenges and limited technology for achieving a low doping concentration in HgCdTe. This will be helpful to reduce undesirable transmission in a HOT Auger-suppressed detector to facilitate improved optical performance while reducing dark current by incorporating a thinner semiconductor layer.
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Why is it important?
To fabricate the sample without thermal and structural degradation of the HgCdTe Layer.
Perspectives
The work shows a reduction in overall transmission despite having a thin layer. The work will be followed by further optimization for enhanced absorption.
Mohammad Sojib
Virginia Commonwealth University
Read the Original
This page is a summary of: Fabrication of polarization-independent dielectric grating array integrated onto a thin mercury cadmium telluride layer, June 2026, SPIE,
DOI: 10.1117/12.3093711.
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