What is it about?
A model for calculating the electrostatic field in the system "probe of a tunnel microscope - a nanostructure based on a DLC film" was developed. A finite-element modeling of the localization of the field was carried out, taking into account the morphological and topological features of the nanostructure. The obtained results and their interpretation contribute to the development of the concepts to the model of tunnel electric transport processes.
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Why is it important?
The modes of increasing the sensitivity of tunneling microscopes in the study of nanoscale structures with field emission and photoemission are considered.
Perspectives
The possibility for effective usage of the tunneling microscopy methods in the development of new nanophotonic devices is shown.
Professor Alexander N Yakunin
Institute of Precision Mechanics and Control
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This page is a summary of: Modeling the electrostatic field localization in nanostructures based on DLC films using the tunneling microscopy methods, April 2018, SPIE,
DOI: 10.1117/12.2315179.
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