Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InP

E. A. Martin, K. P. Pande, M. A. diForte-Poisson, C. Brylinski, G. Colomer, M. Razeghi
  • April 1987, SPIE
  • DOI: 10.1117/12.941062

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http://dx.doi.org/10.1117/12.941062