Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

  • G. I. Zebrev, M. S. Gorbunov, V. S. Pershenkov
  • March 2008, SPIE
  • DOI: 10.1117/12.802480

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http://dx.doi.org/10.1117/12.802480

The following have contributed to this page: Dr Maxim S Gorbunov