Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

  • Syed Mukulika Dinara, Saptarsi Ghosh, Sanjay Kr. Jana, Shubhankar Majumdar, Dhrubes Biswas, Sekhar Bhattacharya
  • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, September 2017, American Vacuum Society
  • DOI: 10.1116/1.4996735

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The following have contributed to this page: Dr Shubhankar Majumdar

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