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This page is a summary of: Interfacial and electrical properties of ZrxTi1−xO4 (x=0.66) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-k gate dielectric, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, July 2008, American Vacuum Society,
DOI: 10.1116/1.2945302.
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