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This page is a summary of: Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers, IEEE Transactions on Electron Devices, September 2012, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/ted.2012.2204996.
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