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This page is a summary of: Uniform High-Current Cathodes Using Massive Arrays of Si Field Emitters Individually Controlled by Vertical Si Ungated FETs—Part 2: Device Fabrication and Characterization, IEEE Transactions on Electron Devices, June 2011, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/ted.2011.2128323.
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