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This page is a summary of: Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating, IEEE Transactions on Components Packaging and Manufacturing Technology, November 2011, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/tcpmt.2011.2167969.
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