Publication not explained

This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.

If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.

Featured Image

Read the Original

This page is a summary of: External rf substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/pvsc.2005.1488399.
You can read the full text:

Read

Contributors

The following have contributed to this page