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This page is a summary of: Material Gain in Ga0.66In0.34NyAs1–y, GaNyAs0.69–ySb0.31, and GaNyP0.46Sb0.54–yQuantum Wells Grown on GaAs Substrates: Comparative Theoretical Studies, IEEE Journal of Quantum Electronics, December 2014, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/jqe.2014.2363763.
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