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This page is a summary of: A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process, February 2022, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/isscc42614.2022.9731537.
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