Improvement of the breakdown voltage of GaAs-FETs using low-temperature-grown GaAs insulator

H. Thomas, J.K. Luo, D.V. Morgan, D. Westwood, K. Lipka, E. Splingart, E. Kohn
  • Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/ispsd.1994.583686

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http://dx.doi.org/10.1109/ispsd.1994.583686

The following have contributed to this page: Jack Luo (Jikui Luo)