Improvement of the breakdown voltage of GaAs-FETs using low-temperature-grown GaAs insulator

H. Thomas, J.K. Luo, D.V. Morgan, D. Westwood, K. Lipka, E. Splingart, E. Kohn
  • Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/ispsd.1994.583686

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

The following have contributed to this page: Jack Luo (Jikui Luo)