Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: Internally wavelength stabilized GaAs-based diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications, October 2021, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/islc51662.2021.9615875.
You can read the full text:
Contributors
The following have contributed to this page
