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This page is a summary of: First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch, December 2022, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/iedm45625.2022.10019440.
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