Ultra-low intersubband absorption saturation intensity in InGaAs/AlAs/AlAsSb coupled double quantum wells with AlAs diffusion-stopping layers

J. Kasai, T. Mozume, H. Yoshida, T. Simoyama, A.V. Gopal, H. Ishikawa
  • Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/iciprm.2003.1205401

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1109/iciprm.2003.1205401

The following have contributed to this page: Venu Gopal Achanta