Ultra-low intersubband absorption saturation intensity in InGaAs/AlAs/AlAsSb coupled double quantum wells with AlAs diffusion-stopping layers

J. Kasai, T. Mozume, H. Yoshida, T. Simoyama, A.V. Gopal, H. Ishikawa
  • Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/iciprm.2003.1205401

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