ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts

P. Paramahans, S. Gupta, R. K. Mishra, N. Agarwal, A. Nainani, Y. Huang, M.C. Abraham, S. Kapadia, U. Ganguly, S. Lodha
  • June 2012, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/vlsit.2012.6242472

ZnO as an interfacial layer for MIS ohmic contacts on n-type Germanium, Silicon and Silicon:Carbon

What is it about?

We propose that doped ZnO is a good alternative as an interfacial layer(IL) for Metal-Interfacial layer-Semiconductor type contacts. The good conduction band alignment of ZnO with Si, Ge and Si:C and its conductive nature make it a good IL for Ohmic MIS contacts.

Why is it important?

Conductive IL layers have been ignored in MIS ohmic contacts. This paper brings out the benefits of using MIS contacts in general and MIS contacts with conductive IL in particular.

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