Electron Mobility Model for $\langle \hbox{110} \rangle$ Stressed Silicon Including Strain-Dependent Mass

  • Siddhartha Dhar, Enzo Ungersbock, Hans Kosina, Tibor Grasser, Siegfried Selberherr
  • IEEE Transactions on Nanotechnology, January 2007, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/tnano.2006.888533

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http://dx.doi.org/10.1109/tnano.2006.888533