Electron Mobility Model for $\langle \hbox{110} \rangle$ Stressed Silicon Including Strain-Dependent Mass

• Siddhartha Dhar, Enzo Ungersbock, Hans Kosina, Tibor Grasser, Siegfried Selberherr

• IEEE Transactions on Nanotechnology, January 2007, Institute of Electrical & Electronics Engineers (IEEE)
• DOI: 10.1109/tnano.2006.888533