Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

William M. Waller, Mark Gajda, Saurabh Pandey, Johan J. T. M. Donkers, David Calton, Jeroen Croon, Serge Karboyan, Jan Sonsky, Michael J. Uren, Martin Kuball
  • IEEE Transactions on Electron Devices, March 2017, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/ted.2017.2654800

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http://dx.doi.org/10.1109/ted.2017.2654800

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