Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs

  • Muhammad Usman, Benedetto Buono, Anders Hallen
  • IEEE Transactions on Electron Devices, December 2012, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/ted.2012.2222414

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http://dx.doi.org/10.1109/ted.2012.2222414

The following have contributed to this page: Dr. Muhammad Usman