The Ground Plane in Buried Oxide for Controlling Short-Channel Effects in Nanoscale SOI MOSFETs

  • M. Jagadesh Kumar, M. Siva
  • IEEE Transactions on Electron Devices, June 2008, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/ted.2008.922859

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http://dx.doi.org/10.1109/ted.2008.922859