Publication not explained

This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.

If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.

Featured Image

Read the Original

This page is a summary of: IIIA-3 comparison of compositionally abrupt and graded emitter-base junctions in the heterojunction bipolar transistor, IEEE Transactions on Electron Devices, November 1986, Institute of Electrical & Electronics Engineers (IEEE), DOI: 10.1109/t-ed.1986.22774.
You can read the full text:



Be the first to contribute to this page