High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE

Bablu K. Ghosh, Ismail Saad, Akio Yamamoto
  • September 2011, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/rsm.2011.6088368
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The following have contributed to this page: Dr Bablu K Ghosh