100 W highly efficient octave bandwidth GaN-HEMT power amplifier

  • Mhd. Tareq Arnous, Khaled Bathich, Sebastian Preis, Daniel Gruner, Georg Boeck
  • May 2012, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/mikon.2012.6233537

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http://dx.doi.org/10.1109/mikon.2012.6233537