Optical studies of strained InGaN/GaN quantum structures implanted with europium for red light emitting diodes

J. Wang, W. Jadwisienczak, M. A. Ebdah, M. E. Kordesch, A. Anders
  • December 2011, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/isdrs.2011.6135411
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http://dx.doi.org/10.1109/isdrs.2011.6135411

The following have contributed to this page: Professor Andre Anders