Measurements and simulations of the turn-off behaviour of diodes with deep energy levels of Se implanted in Si

Eric Pertermann, Josef Lutz, Markus Arnold, Dietrich R. T. Zahn, Hans-Joachim Schulze, Hans Peter Felsl, Franz-Josef Niedernostheide
  • September 2013, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/epe.2013.6634738

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http://dx.doi.org/10.1109/epe.2013.6634738

The following have contributed to this page: Professor Dietrich RT Zahn