Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-silicon via interconnects

Silvia Armini, Harold Philipsen, Augusto Redolfi, Dimitrios Velenis, Kristof Croes, Nancy Heylen, Zaid El-Mekki, Kevin Vandersmissen, Gerald Beyer, Bart Swinnen, Eric Beyne, Yann Civale
  • May 2012, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/ectc.2012.6248928

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http://dx.doi.org/10.1109/ectc.2012.6248928