What is it about?
This is a design of a very low-noise transimpedance amplifier (TIA) for a novel multi-pixel CMOS photon detector which performs secondary electron (SE) detection in the scanning electron microscope (SEM).
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Why is it important?
This paper presents a low-noise transimpedance amplifier that is highly suitable to be used as a critical constituent block for the CMOS photon detector which aims to take over the role of photomultiplier tube in SE detection in the SEM. Solid-state approaches have recently been reinvigorated for improving certain aspects of SE detection in scanning electron microscopy and this work has supported and contributed to the trend.
Perspectives
A good design of transimpedance amplifier for secondary electron detection in the SEM.
Dr Joon Huang Chuah
University of Malaya
Read the Original
This page is a summary of: Design of low‐noise CMOS transimpedance amplifier, Microelectronics International, July 2013, Emerald,
DOI: 10.1108/mi-11-2012-0080.
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