RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application

Siti Maisurah Mohd Hassan, Yusman M. Yusof, Arjuna Marzuki, Nazif Emran Farid, Siti Amalina Enche Ab Rahim, Mohd Hafis M. Ali
  • Microelectronics International, April 2014, Emerald
  • DOI: 10.1108/mi-09-2013-0044

Transistors for millimeter-wave application

What is it about?

Transistor is the heart of active circuits such as amplifier. In this work, we present a new layout for NMOS transistor that is suitable for application in millimeter-wave frequency. This work is important since it proves that CMOS technology can also be used in millimeter-wave band which was previously dominated by the III-IV materials.

Why is it important?

We have shown that the performance of the transistor can be improved by optimizing the layout of the transistor. We have also presented an analysis that covers both the number of fingers as well as the finger width which are the important parameters in determining the transistor's size.


Ms Siti Maisurah Mohd Hassan
TM Research & Development Sdn. Bhd.

This work is unique since it shows that circuit designer is able to improve the performance of the transistor without solely depending on the process offered by the foundry.

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The following have contributed to this page: Ms Siti Maisurah Mohd Hassan and Dr Arjuna Bin Marzuki