What is it about?
This manuscript describes a new phase identification algorithm called poly intended for spotty selected-area electron diffraction patterns collected from polymorphic nanomaterials. We have developed this new approach to determine the predominant high-pressure phases produced in laser-shock-affected regions of Silicon. In this study, we find that extreme femtosecond laser fluences ( > 40 J/cm2 ) lead to the formation of the novel t32-Si and t32*-Si phases and study their relaxation in time.
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Why is it important?
Phase identification in polymorphic nanomaterials is a challenging task. Previously, it has been performed by analyzing selected-area electron diffraction (SAED) patterns from laser-shock-affected regions of Si samples, revealing high-pressure phases such as t32-Si and t32-Si. However, the analysis was complicated by pattern overlap from multiple crystallites within the selected area, with many diffraction spots matching multiple potential phases. This new algorithm reduces ambiguity and enables spot-wise phase identification with greater accuracy.
Perspectives
It was a rewarding experience to collaborate with a motivated team and publish our work in a professional journal like (IUCr) Journal of Applied Crystallography. https://doi.org/10.1107/S1600576724011178 We hope it aids researchers in characterizing their polymorphic nanomaterials with greater accuracy.
Rasool Doostkam
Institut national de la recherche scientifique
Read the Original
This page is a summary of: Studying novel high-pressure phases in laser-shock-affected silicon using poly: an algorithm for spot-wise phase identification, Journal of Applied Crystallography, February 2025, International Union of Crystallography,
DOI: 10.1107/s1600576724011178.
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