First-principles study of oxygen adsorption on the nitrogen-passivated4H-SiC (0001) silicon face

  • Christopher R. Ashman, Gary Pennington
  • Physical Review B, August 2009, American Physical Society (APS)
  • DOI: 10.1103/physrevb.80.085318

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http://dx.doi.org/10.1103/physrevb.80.085318