Characteristic jump in the electrical properties of aPd∕AlN∕Si-based device on exposure to hydrogen

J. S. Thakur, H. E. Prakasam, Linfeng Zhang, E. F. McCullen, L. Rimai, V. M. García-Suárez, R. Naik, K. Y. S. Ng, G. W. Auner
  • Physical Review B, February 2007, American Physical Society (APS)
  • DOI: 10.1103/physrevb.75.075308

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http://dx.doi.org/10.1103/physrevb.75.075308

The following have contributed to this page: Victor Garcia-Suarez