What is it about?
We investigated the surface and optical properties of InGaN quantum dots undergone growth interruption treatment. The photoluminescence integral intensity of InGaN quantum dots presents abnormal increase in medium temperature range (viz. 150 K to 200 K). And also the spectra peak and line-width are almost unchanged with temperature. We recognized such phenomena as the new judgement of InGaN quantum dots and explained explicitly in this work.
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Why is it important?
The luminescence property is very important in InGaN materials and we believe the InGaN quantum dots will present superior optical performance. The black regions shown by transmission electron microscopy are disputable by researchers when one want to recognize them as InGaN quantum dots or localized states. Here we found the abnormal increase of interal intensity of photoluminescence at medium tempearture range, the almost unchanged peak energy and line-width of the spectra should be the new judement of the existence of InGaN quantum dots.
Perspectives
We hope this work will give new perspectives of the research of InGaN quantum dots. We think the InGaN quantum dots cannot only be judged from the dot-like morphology but also from the temperature-dependent photoluminescent results. The latter may be more convincible.
Yangfeng Li
Institute of Physics, Chinese Academy of Sciences
Read the Original
This page is a summary of: Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time, Materials Research Express, November 2019, Institute of Physics Publishing,
DOI: 10.1088/2053-1591/ab5be0.
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