Passivation of SiC device surfaces by aluminum oxide

  • A Hallén, M Usman, S Suvanam, C Henkel, D Martin, M K Linnarsson
  • IOP Conference Series Materials Science and Engineering, March 2014, Institute of Physics Publishing
  • DOI: 10.1088/1757-899x/56/1/012007

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http://dx.doi.org/10.1088/1757-899x/56/1/012007

The following have contributed to this page: Dr. Muhammad Usman and Dr David M Martin