Control of Schottky barrier height of Ag/Mn/n-GaAs(110) diodes with Mn interlayer thickness

D Spaltmann, J Guerts, N Esser, D R T Zahn, W Richter, R H Williams
  • Semiconductor Science and Technology, March 1992, Institute of Physics Publishing
  • DOI: 10.1088/0268-1242/7/3/011
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The following have contributed to this page: Professor Dietrich RT Zahn