Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

  • Sukhyung Park, Kyoungah Cho, Sangsig Kim
  • Semiconductor Science and Technology, April 2015, Institute of Physics Publishing
  • DOI: 10.1088/0268-1242/30/5/055019

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http://dx.doi.org/10.1088/0268-1242/30/5/055019