The effect of high acceptor dopant concentration of Zn2  on electrical, optical and structural properties of the In2O3 transparent conducting thin films

Mohammad-Mehdi Bagheri-Mohagheghi, Mehrdad Shokooh-Saremi
  • Semiconductor Science and Technology, December 2002, Institute of Physics Publishing
  • DOI: 10.1088/0268-1242/18/2/306

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http://dx.doi.org/10.1088/0268-1242/18/2/306

The following have contributed to this page: Dr Mehrdad Shokooh-Saremi