Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

  • I P Marko, P Ludewig, Z L Bushell, S R Jin, K Hild, Z Batool, S Reinhard, L Nattermann, W Stolz, K Volz, S J Sweeney
  • Journal of Physics D Applied Physics, August 2014, Institute of Physics Publishing
  • DOI: 10.1088/0022-3727/47/34/345103

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http://dx.doi.org/10.1088/0022-3727/47/34/345103