Surface recombination velocities for n-type 4H-SiC treated by various processes

  • Yuto Mori, Masashi Kato, Masaya Ichimura
  • Journal of Physics D Applied Physics, July 2014, Institute of Physics Publishing
  • DOI: 10.1088/0022-3727/47/33/335102

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http://dx.doi.org/10.1088/0022-3727/47/33/335102

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