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Copper thin film has technological advantages. We have prepared series of copper complexes which can act as precursor for CVD of copper. Thin film characterization confirm the formation of Cu thin film.
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This page is a summary of: Development and vapour pressure of metallo-organic precursors of copper for the deposition of copper thin films by a plasma-assisted MOCVD, Inorganic and Nano-Metal Chemistry, September 2017, Taylor & Francis,
DOI: 10.1080/24701556.2017.1357591.
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