What is it about?
In this paper, we report on information on free carriers lifetime (τR), which is important for the understanding of nature of recombination centers in amorphous semiconductors. Since the transient photocurrent is intimately related to the energetic distribution of localized states (DOS) and τR, it may be used to study them. The DOS and τR are key material quality indicators, of importance in the design of improved solar cells, photodetectors and thin-film transistors.
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Why is it important?
We think that the main novelty in this work is the determination of the free carriers lifetime without going through the calculation of the DOS, thing that was not done before. To our knowledge and so far, to obtain the free carriers lifetime one must first determine the DOS from the experimental transient photocurrent I(t), then simulate I(t), using the calculated DOS, and try to fit it to the experimental one by giving different values of τR until we come across the good one.
Perspectives
I believe that this result will be of great interest in the field of amorphous semiconductors and that the publication of this manuscript by Philosophical Magazine - Part A: Materials Science represents a perfect platform for me to share this result with the international research community.
Mr Hocine Belgacem
Universite Hadj Lakhdar Batna
Read the Original
This page is a summary of: A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors, The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, October 2018, Taylor & Francis,
DOI: 10.1080/14786435.2018.1532120.
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