Properties of Al-doped ZnO films grown by atmospheric pressure MOCVD on different orientation sapphire substrates

  • S. Kuprenaite, A. Abrutis, V. Plausinaitiene, A. Arkhangelskiy, V. Kubilius, L. Silimavicius, T. Murauskas, Z. Saltyte
  • Integrated Ferroelectrics, June 2016, Taylor & Francis
  • DOI: 10.1080/10584587.2016.1186440

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http://dx.doi.org/10.1080/10584587.2016.1186440