What is it about?
Hypotheis of high IQE for AlGaN based DUV-LEDs.
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Why is it important?
In stead of making carrier localization by diffusion, the localized carrier injection for AlGaN based LEDs might function to boost IQE.
Perspectives
This might give prospect to improve LEDs.
Dr. Akira Hirano
UV Craftory
Read the Original
This page is a summary of: Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps, Applied Physics Letters, January 2019, American Institute of Physics,
DOI: 10.1063/1.5063735.
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