What is it about?
Grow the structure on a relaxed InGaN buffer. This way the strain in the GaN is higher but the one in the InGaN superlattice is lower. All together a dramatic improvement in quantum efficiency is expected.
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Why is it important?
The work suggest a strategy for increasing LED efficiency. It is a massive global market.
Perspectives
We noticed that this work did make sense of reports of increased efficiency for LEDs grown on InGaN substrates. Nice to find experimental validation.
Dr Max A Migliorato
University of Manchester
Read the Original
This page is a summary of: Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management, Journal of Applied Physics, August 2013, American Institute of Physics,
DOI: 10.1063/1.4818794.
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