What is it about?
In this work we describe the design, the MBE growth and the PL study of single InAs quantum dot grown on metamorphic InGaAs buffers that emit in the 1.3 - 1.55 µm window.
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Why is it important?
This work represents a breakthrough for the development of single photon sources able to emit in the optical fiber wavelength range
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This page is a summary of: Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates, Applied Physics Letters, April 2011, American Institute of Physics,
DOI: 10.1063/1.3584132.
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