Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias, Journal of Applied Physics, June 2010, American Institute of Physics,
DOI: 10.1063/1.3372764.
You can read the full text:
Contributors
The following have contributed to this page
